Single-Crystal Nanowire Transistor for Logic and Memory Applications
B. Yu, L. Ye and M. Meyyappan
NASA Ames Research Center, US
transistor, CMOS, logic, memory, nanowire
In this paper we report chemical synthesis, device fabrication, and device physics investigation of 1-D single-crystalline nanowire field-effect transistor (SNW-FET) for logic and memory applications. Wafer-scale transistor arrays were fabricated with semiconducting nanowires serve as active channel (for logic) or signal read-out route (for memory). It is demonstrated that the single-crystal nanowire transistor, due to its unique structural features, can be served for high on-off ratio logic switching with superior scalability and data storaging. Device physics study is presented, focusing on ambipolar channel conducting, subthreshold behavior, parasitic resistance, carrier mobility, low-barrier metal-semiconductor Schottky junctions, and performance figure-of-merit analysis. The feasibility of extending the bottom-up fabricated nanowire transistors into sub-10nm CMOS technology is evaluated.
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Nanotech 2005 Conference Program Abstract