Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology
R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring and S. Selberherr
Vienna University of Technology, AT
transistor reliability simulation, NBTI degradation, lifetime estimation
The NBTI degradation was systematically investigated for a 90nm p-MOSFET by simulation and experiment. The reaction-diffusion model was extended for NBTI simulations at arbitrary gate voltage, frequency, and duty cycle within a calibrated range. Long-time NBTI degradation was simulated up to 10 years in order to estimate the transistor lifetime under typical chip operation conditions.
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Nanotech 2005 Conference Program Abstract