SPM Investigation of the Electron Properties YSZ Nanostructured Films
D.A. Antonov, O.N. Gorshkov, A.P. Kasatkin, G.A. Maximov, D.A. Saveliev and D.O. Filatov
University of Nizhny Novgorod, RU
nanoclusters, YZS films, STM, AFM, coulomb blockade, resonance tunneling
In present work, the electron properties of YSZ nanostructured films using combined Atomic Force Microscopy / Òunnel Spectroscopy (AFMTS) have been investigated.It was demonstrated, the implantation of the films ZrO2(Y) by zirconium ions reduced forming channels tunnel current with lateral sizes from ~1-10 nm. It was founded, that I-V curves have staircase structures that is typical for coulomb blockade and oscillations that is typical of resonance tunneling through discrete electronic states in nano-size clasters. The form evolution of the separate current channel at increasing a bias voltage on the tunnel contact (probe-dielectric-substrate) has been investigated. It was shown that at low bias voltage the fine structure the channel arose.
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Nanotech 2005 Conference Program Abstract