Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2005 NSTI Nanotechnology Conference & Trade Show
Nanotech 2005
Bio Nano 2005
Business & Investment
Nano Impact Workshop
Program
Sessions
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Index of Keywords
Keynote Presentations
Confirmed Speakers
Participating Companies
Industry Focus Sessions
Nanotech Expo
Special Symposia
Conferences
Sponsors
Exhibitors
Venue 2005
Organization
Press Room
Subscribe
Site Map
Nanotech 2005 At A Glance
Nanotech Proceedings
Nanotechnology Proceedings
Global Partner
nano tech
Supporting Organizations
Nanotech 2005 Supporting Organization
Media Sponsors
Nanotech 2005 Medias Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration

M. Pourfath, A. Gehring, B.H. Cheong, W.J. Park, H. Kosina and S. Selberherr
Vienna University of Technology, AT

Keywords:
carbon nanotube field effect transistors, double gate structure, ambipolar behavior

Abstract:
Vertically grown carbon nanotubes have the potential for tera-level Integration. However, the well-known ambipolar behavior limits the performance of carbon nanotube field effect transistors. In this work we demonstrate that a double gate structure effectively suppresses the ambipolar behavior. Using the double gate design excellent device characteristics along with the potential for high scale integration are achieved, which are necessary for future nanoelectronic applications.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2005 Conference Program Abstract

 
Gold Sponsors
Nanotech Gold Sponsors
Silver Sponsors
Nanotech Silver Sponsors
Gold Key Sponsors
Nanotech Gold Key Sponsors
Nanotech Ventures Sponsors
Nanotech Ventures Sponsors
Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact