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Optical Properties of Silicon Nanocrystals Embedded in SiO2 Matrix

L. Ding, T.P. Chen and Y. Liu
Nanyang Technological University, SG

Keywords:
silicon nanocrystals, spectroscopic ellipsometry, SE, optical constant

Abstract:
In this work, spectroscopic ellipsometry (SE), which is a nondestructive method, is employed to determine the optical constants (refractive index and extinction coefficient) and thus the dielectric functions of the isolated nc-Si with a mean size of ~ 4nm embedded in a SiO2 matrix in the photon-energy range of 1.13 - 4.96 eV (or wavelengths of 250 - 1100 nm). It is shown that the optical properties of the nc-Si are well described by the F-B (Forouhi-Bloomer) model. A large band gap expansion (0.45 eV) is observed for the nc-Si, indicating a significant quantum confinement effect.

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