Optical Properties of Silicon Nanocrystals Embedded in SiO2 Matrix
L. Ding, T.P. Chen and Y. Liu
Nanyang Technological University, SG
silicon nanocrystals, spectroscopic ellipsometry, SE, optical constant
In this work, spectroscopic ellipsometry (SE), which is a nondestructive method, is employed to determine the optical constants (refractive index and extinction coefficient) and thus the dielectric functions of the isolated nc-Si with a mean size of ~ 4nm embedded in a SiO2 matrix in the photon-energy range of 1.13 - 4.96 eV (or wavelengths of 250 - 1100 nm). It is shown that the optical properties of the nc-Si are well described by the F-B (Forouhi-Bloomer) model. A large band gap expansion (0.45 eV) is observed for the nc-Si, indicating a significant quantum confinement effect.
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Nanotech 2005 Conference Program Abstract