Application of Magnetic Neutral Loop Discharge Plasma in Deep Quartz and Silicon Etching Process for MEMS/NEMS Devices Fabrication
Y. Morikawa, T. Hayashi, K. Suu and M. Ishikawa
ULVAC, Inc., JP
deep etching, NLD, plasma, modulation
ULVAC’s Si deep etching technique has achieved high etching rate as high as 20 um/min as well as extremely high selectivity over resist mask as high as 100 or higher ensuring good etching performance.
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Nanotech 2005 Conference Program Abstract