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Electron Energy States of INAS/GAAS Quantum Ring Array

I. Filikhin, E. Deyneka, G. Melikian and B. Vlahovic
North Carolina Central University, US

semiconductor, quantum rings, electron, energy states

Planar array of semiconductor quantum rings is studied under the energy dependent effective mass approximation. Rectangular shape InAs quantum rings (QR) are embedded into the GaAs substrate. The 3D confined energy problem is solved numerically by the finite element method in the single sub-band approach. Periodic boundary conditions for the electron wave function on the surface side of the QR array unit cell are chosen. The QR’s mutual influence in an array was studied. It is shown that the effect of proximity among QRs is sufficient, when the distances between neighbouring QRs is less than 2-4 nm. The magnitude of this effect depends on the value of the confinement energy. It was also found that for the wide QRs the non-parabolic effect does considerably alter the energy of the electron states, especially when the height and the width of QR are relatively small.

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