Extraction of Mosfet Effective Channel Length and Width Based on the Transconductance-To-Current Ratio
A.I.A. Cunha, M.C. Schneider, C. Galup-Montoro, C.D.C. Caetano and M.B. Machado
Federal University of Santa Catarina, BR
extraction, effective channel length, transconductance-to-current ratio
This paper presents a very simple methodology for determining the effective channel length and width, which is independent of the determination of the threshold voltage. The procedure is based on measurement of the transconductance-to-current ratio (gm/ID) characteristic of the MOSFET in the linear region, from weak to moderate inversion. For the extraction of both the effective channel length and width, the gm/ID characteristic is determined for several devices of different mask channel lengths and widths, respectively.
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Nanotech 2005 Conference Program Abstract