A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects
D. Zhang, Z. Yu and L. Tian
Tsinghua University, CN
2D electrostatics, 2D quantum effects, charge, current
A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the applicability to various types of FinFETs, from double-gate (DG) to Omega FinFET or nanowire FinFET. Compared to numerical simulations and experimental data, the model correctly predicts carrier density and terminal current of decanano-scaled devices.
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Nanotech 2005 Conference Program Abstract