Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures
Y. Liu, T.P. Chen, C.Y. Ng and L. Ding
Nanyang Technological University, SG
Si nanocrystal, MOS, charge trapping
In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is observed that charge trapping in nc-Si with different distributions in the gate oxide leads to different behaviors in MOS electrical characteristics.
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Nanotech 2005 Conference Program Abstract