Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures
Y. Liu, T.P. Chen, C.Y. Ng and L. Ding
Nanyang Technological University, SG
Keywords:
Si nanocrystal, MOS, charge trapping
Abstract:
In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is observed that charge trapping in nc-Si with different distributions in the gate oxide leads to different behaviors in MOS electrical characteristics.
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