The Effect of Source/Drain Extension Asymmetry on the Leakage Current of Ohmicly-contacted Carbon Nanotube FETs
K. Alam and R. Lake
University of California Riverside, US
Keywords:
CNT, leakage current
Abstract:
The geometry dependence of the leakage current by modeling the effect of source/drain extension asymmetry on the leakage current of CNTFETs with 20 nm wrap-around gates is investigated. The symmetric geometry has the highest leakage current. The asymmetric geometry with drain extension fixed to 4 nm results in the next highest leakage. The asymmetric geometry with source extension fixed to 4 nm results in the lowest leakage. This configuration blocks the inter-band tunneling at the high field region of the drain. The best device has a high ON/OFF current ratio (~1E6) and inverse subthreshold slope close to the ideal value (~63 mV/dec).
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