Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2005 NSTI Nanotechnology Conference & Trade Show
Nanotech 2005
Bio Nano 2005
Business & Investment
Nano Impact Workshop
Program
Sessions
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Index of Keywords
Keynote Presentations
Confirmed Speakers
Participating Companies
Industry Focus Sessions
Nanotech Expo
Special Symposia
Conferences
Sponsors
Exhibitors
Venue 2005
Organization
Press Room
Subscribe
Site Map
Nanotech 2005 At A Glance
Nanotech Proceedings
Nanotechnology Proceedings
Global Partner
nano tech
Supporting Organizations
Nanotech 2005 Supporting Organization
Media Sponsors
Nanotech 2005 Medias Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Electronics and Optoelectronics with Single Carbon Nanotubes

P. Avouris
IBM, US

Keywords:
nanotubes, nanoelectronics, optoelectronics

Abstract:
Invited Talk: Carbon nanotubes (CNTs) are 1D nanostructures with properties ideal for applications in nano- and opto-electronics. Strong emphasis has been placed on the fabrication of CNT field-effect transistors (CNTFETs). In general, charge-transfer at the CNT-metal interfaces leads to the formation of Schottky barriers, which adversely affect the performance of the FET. Furthermore, upon scaling of the gate insulator thickness, unipolar CNTFETs turn ambipolar with large leakage currents. We eliminated these problems by: (a) electrostatic doping of the contacts, and (b) chemical doping with adsorbed molecules. The resulting unipolar CNTFETs have outstanding operational characteristics. Ambipolar CNTFETs are particularly valuable in photonics. We have used a-CNTFETs to inject electrons and holes from the opposite terminals of the FET. A fraction of these carriers recombine radiatively. Thus, we produce an electrically-excited single nanotube molecule light source. Unlike conventional p-n diodes, a-CNTFETs are not doped and there is no fixed p-n interface. By spatially resolving the emission we found that the emitting region can be translated at will along a CNTFET channel by varying the gate voltage. Study of the properties of the emission as a function of applied bias provides new insights on the electrical transport in CNTs. Stationary light spots are also observed and their generation mechanism involving defects is analyzed. Finally, I will present photoconductivity spectra of individual CNTs that provide information on the nature of the excited states of the CNTs.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2005 Conference Program Abstract

 
Gold Sponsors
Nanotech Gold Sponsors
Silver Sponsors
Nanotech Silver Sponsors
Gold Key Sponsors
Nanotech Gold Key Sponsors
Nanotech Ventures Sponsors
Nanotech Ventures Sponsors
Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact