Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2005 NSTI Nanotechnology Conference & Trade Show
Nanotech 2005
Bio Nano 2005
Business & Investment
Nano Impact Workshop
Program
Sessions
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Index of Keywords
Keynote Presentations
Confirmed Speakers
Participating Companies
Industry Focus Sessions
Nanotech Expo
Special Symposia
Conferences
Sponsors
Exhibitors
Venue 2005
Organization
Press Room
Subscribe
Site Map
Nanotech 2005 At A Glance
Nanotech Proceedings
Nanotechnology Proceedings
Global Partner
nano tech
Supporting Organizations
Nanotech 2005 Supporting Organization
Media Sponsors
Nanotech 2005 Medias Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation

H. Abebe, E.C. Cumberbatch, V. Tyree and H.C. Morris
USC/ISI MOSIS, US

Keywords:
device modeling, MOSFET, quantum effects, SPICE

Abstract:
The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the MOS device is in depletion or weak inversion. However, the approach has not had comparable success in approximating the inversion charge density when the device is at strong inversion (see Stern [1] and Moglestue [2]). In this paper we continue to use the triangular potential to estimate the inversion charge, but we use asymptotic solutions of the Poisson equation for the MOS device at strong inversion. The electrostatic potential asymptotic expression is given in [3], which was improved in [4]. Our analytical Schrödinger-Poisson (SP) result is compared with the Bohm potential [5] or Density-Gradient (DG) solutions [6, 7] and Hansch quantum models [8]. Our SP analytical model gives a close approximation to the full numerical inversion charge density simulation results of the DG model (see Figure 1).

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2005 Conference Program Abstract

 
Gold Sponsors
Nanotech Gold Sponsors
Silver Sponsors
Nanotech Silver Sponsors
Gold Key Sponsors
Nanotech Gold Key Sponsors
Nanotech Ventures Sponsors
Nanotech Ventures Sponsors
Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact