Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2005 NSTI Nanotechnology Conference & Trade Show
Nanotech 2005
Bio Nano 2005
Business & Investment
Nano Impact Workshop
Program
Sessions
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Index of Keywords
Keynote Presentations
Confirmed Speakers
Participating Companies
Industry Focus Sessions
Nanotech Expo
Special Symposia
Conferences
Sponsors
Exhibitors
Venue 2005
Organization
Press Room
Subscribe
Site Map
Nanotech 2005 At A Glance
Nanotech Proceedings
Nanotechnology Proceedings
Global Partner
nano tech
Supporting Organizations
Nanotech 2005 Supporting Organization
Media Sponsors
Nanotech 2005 Medias Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

The Modeling and Characterization of Nano-Scale MOSFET Resistance

J-H Lee, H-J Lee, W-H Lee, E-S Kang, J-Y Lee, K-R Byun, J-W Kang, H-J Hwang and O-K Kwon
Sangmyung University, KR

Keywords:
90nm, parasitic resistance, TCAD, RTA

Abstract:
It has been reported that both the shallow junction and the heavily doped extension as the methods to minimize the off-current and to stabilize the on-current of the sub-90nm scaled device, can solve the short-channel effect and manufacturing difficulties. In this work, the performance improvement for the high speed and high performance device has been presented through the resistance study using TCAD simulation. To extract the substantial current values and quasi-fermi level in each region for the given process condition, the simulator calibration must be preceded in order that the results from the process and device simulation has the same doping level and the mobility value as those of the real device. In this paper, n/pMOS devices of which source/drain activation has been done by normal-RTA and spike-RTA, have been used as the targets of the calibration. The results from the TCAD simulation show a good agreement with the electrical characteristics of the real device, based on the comparison between the simulation and measure for correlation of Idsat versus Idoff.

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2005 Conference Program Abstract

 
Gold Sponsors
Nanotech Gold Sponsors
Silver Sponsors
Nanotech Silver Sponsors
Gold Key Sponsors
Nanotech Gold Key Sponsors
Nanotech Ventures Sponsors
Nanotech Ventures Sponsors
Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact