All-Region MOS Model of Mismatch due to Random Dopant Placement
H. Klimach, C. Galup-Montoro and M.C. Schneider
Universidade Federal de Santa Catarina, BR
mismatch, matching, compact model, MOSFET
Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. A model for MOS transistor mismatch was developed, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. CMOS test structures were also designed and fabricated as a way to develop an extensive experimental work, where current mismatch was measured under a wide range of bias conditions.The model shows a good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters.
Back to Program
Nanotech 2005 Conference Program Abstract