Scaling Relation for the Size Dependence of Acoustic, Dielectronic and Photonic Behaviour of Nanosolid Silicon
C.Q. Sun, L.K. Pan and C.M. Li
School EEE, NTU, Singapore, SG
nanostructures, photonics, electronics, dielectrics
Structural miniaturization provides us with a new freedom that is indeed fascinating. The new freedom of size not only allows us to tune the physical and chemical properties of a specimen by simply adjusting the shape and size but also enables us to gain information that is beyond the scope of conventional approaches. Here we show that a recent bond order-length-strength (BOLS) correlation could reconcile the size effect on nanosolid silicon with elucidation of information such as the single energy level of an isolated Si atom, the frequency of Si-Si dimer vibration, the upper limit of photoabsorption/emission, and dielectric suppression.
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Nanotech 2005 Conference Program Abstract