Physics and Modeling of Noise in SiGe HBT Devices and Circuits
Auburn University, US
noise parameters, SiGe HBT, cyclostationary noise, 1=f noise, phase noise
This paper gives an overview of the physics and modeling of noise in SiGe HBT devices and circuits, including RF broadband noise, low-frequency noise, and oscillator phase noise. The ability to simultaneously achieve high cutoö frequency (fT ), low base resistance (rb), and high current gain (¬) using Si processing underlies the low levels of low frequency 1=f noise, RF noise and phase noise of SiGe HBTs. We will show that the phase noise corner frequency in SiGe HBT oscillators is typically much smaller than the 1=f corner frequency measured under dc biasing.
Back to Program
Nanotech 2005 Conference Program Abstract