Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors
M. Schröter and H. Tran
University of Technology Dresden, DE
Si/SiGe bipolar transistors, 2D GICCR, 3D GiCCR, compact modeling
This paper presents the derivation of a two- and threedimensional (2D/3D) generalized Integral-Charge Control Relation (GICCR) that is based on an exact physical relation for the transfer current of bipolar transistors. The resulting compact equation includes spatial variations in bandgap, mobility, current density and potential in both vertical and lateral direction within a transistor structure. The derivation provides a clear meaning of (lateral) geometry dependent quantities and parameters, respectively, that have to be analytically described and used, respectively, in a compact transfer current relation.
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Nanotech 2005 Conference Program Abstract