Compact Modelling of High-Voltage LDMOS Devices
A.C.T. Aarts, R. van der Hout, R. van Langevelde, A.J. Scholten, M.B. Willemsen and D.B.M. Klaassen
Philips Research Laboratories, NE
LDMOS, compact modelling, high-voltage MOS, MOS Model 20, quasi-saturation
In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented. Measurements of the dc-current, its conductances and the capacitances obtained from Y -parameters of an LDMOS device, show that MOS Model 20 provides accurate descriptions in all regimes of operation. For future developments, the inclusion of quasi-saturation in MOS Model 20 is demonstrated. Finally, the consequence of the lateral non-uniformity of the LDMOS device for compact modelling is discussed.
Back to Program
Nanotech 2005 Conference Program Abstract