Physics-Based, Non-Charge-Sheet Compact Modeling of Double-Gate MOSFETs
H. Lu and Y. Taur
University of California at San Diego, US
analytic potential model, compact model, double gate MOSFETs, surrounding gate MOSFETs
A physics-based, non-charge-sheet analytic potential model is presented for undoped (or lightly doped) Double Gate (DG) MOSFETs. With only the mobile charge term included, Poisson’s equation is rigorously solved and the electrostatic potential is derived analytically. A drain current model is developed afterwards using current continuity equation. It is shown that the model continuously covers all MOSFET operation regions without any fitting parameters. No charge sheet approximation is invoked. Therefore, the model readily captures the volume inversion in the subthreshold region. The derivation is also applied to Surrounding Gate (SGT) MOSFETs, which similarly renders a continuous, closed-form solution of drain current.
Back to Program
Nanotech 2005 Conference Program Abstract