Comparison of Surface Potential and Charge-based MOSFET Core Models
C. Galup-Montoro, M. Schneider, V.C. Pahim and R. Rios
Universidade Federal de Santa Catarina, BR
Keywords:
surface potential, inversion charge, compact model, comparison
Abstract:
Since the next generation MOSFET model will be based on either surface potential or inversion charge, a comparison between the two approaches is timely. In this paper, we will analyze in some detail the fundamentals of the two approaches. We will compare the expressions for inversion charge and gate capacitance.
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