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Modeling of Contact Formation in Carbon Nanotube Devices

K. Ravichandran and W. Windl
The Ohio State University, US

Keywords:
ab initio, carbon nanotubes, nanoelectronic devices

Abstract:
The continuing miniaturization of semiconductor devices has currently reached a stage where further progress does not seem to be feasible for much longer without changing the traditional device structure. Several dimensions are about to meet their physical limits (like the thickness of the gate oxide or dopant concentration vs. junction depth in ultrashallow junctions) and require novel solutions.Among other challenges, these novel nanoelectronc devices requires an unprecedented attention to the detailed geometry and electronic properties on the atomic scale. In this talk, we will discuss the simultaneous process and electron-transport modeling on the atomic scale for the example of carbon nanotube and graphene Schottky devices, using accelerated ab-initio molecular dynamics methods and atomistic transport modeling based on the Landauer theory. Our results show that the detailed contact structure is very crucial for predicting the electron transport for such systems.

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