Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2005 NSTI Nanotechnology Conference & Trade Show
Nanotech 2005
Bio Nano 2005
Business & Investment
Nano Impact Workshop
Program
Sessions
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Index of Keywords
Keynote Presentations
Confirmed Speakers
Participating Companies
Industry Focus Sessions
Nanotech Expo
Special Symposia
Conferences
Sponsors
Exhibitors
Venue 2005
Organization
Press Room
Subscribe
Site Map
Nanotech 2005 At A Glance
Nanotech Proceedings
Nanotechnology Proceedings
Global Partner
nano tech
Supporting Organizations
Nanotech 2005 Supporting Organization
Media Sponsors
Nanotech 2005 Medias Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Unified Regional Charge-based MOSFET Model Calibration

G.H. See, S.B. Chiah, X. Zhou, K. Chandrasekaran, W. Shangguan, S.M. Pandey, M. Cheng, S. Chu and L-C Hsia
Nanyang Technological University, SG

Keywords:
implicit surface potential, unified regional, charge

Abstract:
This paper presents a methodology to extract device physical parameters, i.e., electrical oxide thickness (tox), channel doping (Nch), and poly-gate doping (Ngate), as well as smoothing parameters in our unified regional charge-based model [1] with only one gate capacitance (Cgg) data. The interpolation parameters are fitted to satisfy charge neutrality at flat-band condition as well as continuity across regions of operation near flat-band (Vfb) and threshold voltage (Vt), including higher-order derivatives. Through a one-iteration calibration approach, our unified regional charge-based model can predict accurately the experimental data from a 0.11-_m CMOS technology. Compared with iterative/explicit surface-potential models [2], [3], which often requires optimization techniques such as genetic algorithm due to parameter correlation, our unified regional approach has the advantage of less parameter dependency since physical parameters are uncorrelated to the smoothing parameters

Back to Program

Sessions Sunday Monday Tuesday Wednesday Thursday Authors

Nanotech 2005 Conference Program Abstract

 
Gold Sponsors
Nanotech Gold Sponsors
Silver Sponsors
Nanotech Silver Sponsors
Gold Key Sponsors
Nanotech Gold Key Sponsors
Nanotech Ventures Sponsors
Nanotech Ventures Sponsors
Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact