A broad patent position has been established that produces semiconductor wafers containing physically-deepened grooves, ridges and quantum-dots on particular crystal planes with perfectly spaced pitches of 0.9 to 5.4 nm determined by the inherent crystal structure. See www.starmega.com. In our initial R&D, optical lithography is used in a standard production facility on top of our STAR wafer’s patented underlying nanotexture to produce unique and useful new silicon devices and integrated circuits. The high-value-added component of these special STAR wafers is the main basis of this business opportunity.
One generic method for producing nanoridges on wafers of any crystalline structure (including III-Vs) will be demonstrated with crystal models, as will one-dimensional charged carrier transport. Several applications of the STAR concept will be demonstrated with mock-ups, namely: ballistic transport, very high mobility and ultra-low power Si MOSFETs; security and environmental sensors for simultaneous monitoring of hundreds of different molecules based on STAR arrays containing nanotubes, DNA, or other long chain molecules; high temperature classical BCS superconductors (not “HTS”) with Buckyballs between flexible walls; mega-tip probes to SCULPT nanocircuits; particle filters with uniform openings down to at least 0.3 nm for nano-shadow masks and for oxygen separation from nitrogen.