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Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

H. Tran and M. Schroter
University of Technology Dresden, DE

Keywords: bipolar transistor, analytical modeling, compact model

Abstract:
An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the field related transit time components. Comparison to device simulation results show good agreement.

Nanotech 2004 Conference Technical Program Abstract

 
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