R3, an Accurate JFET and 3-Terminal Diffused Resistor Model
Keywords: JFET, diffused resistor, SPICE model, compact model, velocity saturation
This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived from data, and self-heating, which is important for low sheet resistance devices.
Nanotech 2004 Conference Technical Program Abstract