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The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu
University of California at Berkeley, US

Keywords: MOSFETs, compact modeling, surfacepotential-plus model, small dimensional effects

Abstract:
This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

Nanotech 2004 Conference Technical Program Abstract

 
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