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Technology Limits and Compact Model for SiGe Scaled FETs

R.W. Dutton and C-H Choi
Stanford, US

Keywords: strained-Si, STI, stress, ESD, capacitance

Abstract:
Stress relaxation in strained-Si MOSFETs can be significant in the presence of compressive stress imposed by trench isolation, especially for highly scaled active regions. Stress of the strained region is reduced by 2/3 when the active region is scaled from Lactive=0.4 µm to 0.1 µm. Mobility can be lower by 50 % for narrow active widths resulting from the strain relaxation. The strain relaxation may restrict the use of strained-Si MOSFETs for technology nodes beyond 25 nm. Electrical and thermal characteristics of strained-Si devices are investigated and a compact junction capacitance model for strained-Si MOSFET suitable for circuit simulation is proposed.

Nanotech 2004 Conference Technical Program Abstract

 
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