Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2004 NSTI Nanotechnology Conference & Trade Show
Nanotech 2004
BioNano 2004
Program
Topics & Tracks
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Keynotes
Awards
Tutorials
Business & Investment
2004 Sub Sections
Sponsors
Exhibitors
Venue 2004
Proceedings
Organization
Press Room
Purchase CD/Proceedings
NSTI Events
Subscribe
Site Map
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Nanotech Supporting Organizations
Media Sponsors
Nanotech Media Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Sub-Threshold Electron Mobility in SOI-MESFETs

T. Khan, D. Vasileska and T.J. Thornton
Arizona State University, US

Keywords: Schottky junction transistor, SJT, subthreshold conduction, micropower

Abstract:
Micropower circuits use subthreshold MOSFETs that consume minimal power resulting from the combination of ultra-low drain currents (10-11 < Id < 10-5 A/µm) and small drain voltages required for saturation (Vd sat ~150-200mV). Unfortunately, sub-threshold CMOS is a slow technology, with micropower circuits limited to operating frequencies below ~ 1MHz. To achieve higher sub-threshold operating frequencies, we have proposed a Schottky Junction Transistor (SJT) [1] as an alternative to sub-threshold MOSFET devices. It adopts a MESFET architecture and exhibits higher electron mobility. The enhanced MESFET mobility leads to a corresponding increase in the cut-off frequency fT compared to a similar gate length MOSFET carrying the same amount of current

Nanotech 2004 Conference Technical Program Abstract

 
Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact