Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2004 NSTI Nanotechnology Conference & Trade Show
Nanotech 2004
BioNano 2004
Program
Topics & Tracks
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Keynotes
Awards
Tutorials
Business & Investment
2004 Sub Sections
Sponsors
Exhibitors
Venue 2004
Proceedings
Organization
Press Room
Purchase CD/Proceedings
NSTI Events
Subscribe
Site Map
 
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Nanotech Supporting Organizations
Media Sponsors
Nanotech Media Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Investigation of Robust Fully-Silicided NMOSFETs for Sub-100 nm ESD Protection Circuits Design

J-W Lee, H. Tang and Y. Li
Natl Nano Device Labs & Natl Chiao Tung Univ, TW

Keywords: nano-device, fully-silicided NMOSFETs, ESD, VLSI circuit design, SOC application

Abstract:
Electrostatic discharge (ESD) becomes an important issue in vary large scaled integrated (VLSI) circuit design and manufacture, especially for the ultra-thin oxide nano-devices [1-3]. It results from a fact that the gate oxide will be easily damaged during ESD stressing for their relatively high turn-on voltage of parasitic bipolar junction transistors. In this paper, new fully-silicided NMOSFETs are designed, fabricated, and studied; our investigation demonstrates that this new approach significantly improves sustaining ESD robustness which is than that of the conventional fully-silicided device. Furthermore, it has an excellent electrical efficiency than those of drain ballast resistor tied devices. We conclude that the proposed fully-silicided NMOSFET is very attractive to sub-100nm ESD protection VLSI circuit as well as system-on-chip (SOC) design.

Nanotech 2004 Conference Technical Program Abstract

 
Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact