Investigation of Robust Fully-Silicided NMOSFETs for Sub-100 nm ESD Protection Circuits Design
J-W Lee, H. Tang and Y. Li
Natl Nano Device Labs & Natl Chiao Tung Univ, TW
Keywords: nano-device, fully-silicided NMOSFETs, ESD, VLSI circuit design, SOC application
Electrostatic discharge (ESD) becomes an important issue in vary large scaled integrated (VLSI) circuit design and manufacture, especially for the ultra-thin oxide nano-devices [1-3]. It results from a fact that the gate oxide will be easily damaged during ESD stressing for their relatively high turn-on voltage of parasitic bipolar junction transistors. In this paper, new fully-silicided NMOSFETs are designed, fabricated, and studied; our investigation demonstrates that this new approach significantly improves sustaining ESD robustness which is than that of the conventional fully-silicided device. Furthermore, it has an excellent electrical efficiency than those of drain ballast resistor tied devices. We conclude that the proposed fully-silicided NMOSFET is very attractive to sub-100nm ESD protection VLSI circuit as well as system-on-chip (SOC) design.
Nanotech 2004 Conference Technical Program Abstract