InAs/GaAs Quantum Ring in Energy Dependent Quasi Particle Effective Mass Approximation
I. Filikhin, V.M. Suslov, E. Deyneka and B. Vlahovic
North Carolina Central University, US
Keywords: quantum ring, InAs/GaAs, electron properties, computer simulation
Considered is three-dimensional In/As quantum ring using energy dependent quasi-particle-effective-mass approximation. This model was first used by Y. Li et al. (Y. Li, O. Voskoboynikov, C.P. Lee, 2002 Technical Proceedings of International Conference on Modeling and Simulating of Microsystems. April 21-25 San Juan, Puerto Rico, USA (NANOTECH 2002)). To solve the confined energy problem we applied Luttinger-Kohn (J.M. Luttinger and W. Kohn, Phys. Rev. 97, 869 (1955)) kp-perturbation method in a single subband basis approach. The time-independent 3D Schrödinger equation is solved using finite element method. Quantum properties of a semiconductor quantum ring are studied as a function of magnitude of the effective electron mass. Figures 1 and 2 show dependence of the electron ground state energy versus the geometrical characteristics of quantum ring. Comparison of our results with those of Y. Li et al., which solved nonlinear equation is presented. The limits of applicability of the considered models are also discussed. This project is supported by the Department of Defenses through grant No. DAAD 19-01-1-0795.
Nanotech 2004 Conference Technical Program Abstract