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Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

J.L. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre and T. Skotnicki
CNRS, FR

Keywords: threshold voltage, double-gate MOSFET, quantum effects, analytical modeling

Abstract:
A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The model is completely validated using a full 2D quantum-mechanical numerical simulation code. Using this original model, a detailed comparison between symmetric and asymmetric Double-Gate architectures has been performed in terms of threshold voltage dependence with film thickness and doping level.

Nanotech 2004 Conference Technical Program Abstract

 
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