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Full-band Particle-based Simulation of Germanium-On-Insulator FETs

S. Beysserie, J. Branlard, S. Aboud, S.M. Goodnick, T. Thornton and M. Saraniti
Illinois Institute of Technology, US

Keywords: full-band simulation, SOI MOSFET, frequency analysis, Monte Carlo, device modeling, device simulation, MOSFET, germanium

Abstract:
We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high electric fields present in these nanoscale devices. Simulations of Germanium- and Silicon-On-Insulator devices (GOI and SOI, respectively) are performed to quantitatively investigate the predicted increase of performance of GOI technology. A comparison of static and dynamic properties of similar GOI and SOI devices is performed for 50 nm and 35 nm gate lengths.

Nanotech 2004 Conference Technical Program Abstract

 
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