Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2004 NSTI Nanotechnology Conference & Trade Show
Nanotech 2004
BioNano 2004
Program
Topics & Tracks
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Keynotes
Awards
Tutorials
Business & Investment
2004 Sub Sections
Sponsors
Exhibitors
Venue 2004
Proceedings
Organization
Press Room
Purchase CD/Proceedings
NSTI Events
Subscribe
Site Map
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Nanotech Supporting Organizations
Media Sponsors
Nanotech Media Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Feature Length-Scale Modeling of LPCVD and PECVD MEMS Fabrication Processes

L.C. Musson, P. Ho, S.J. Plimpton and R.C. Schmidt
Sandia National Laboratories, US

Keywords: MEMS, CVD, LPCVD, PECVD, level-set method, feature scale

Abstract:
The surface micromachining processes used to manufacture MEMS devices and integrated circuits transpire at such small length scales and are sufficiently complex that theoretical analysis of them is particularly inviting. Under development at Sandia National Laboratories (SNL) is Chemically Induced surface Evolution with Level Sets (ChISELS), a level-set based feature-scale modeler of such processes. The theoretical models used, a description of the software and some example results are presented here. The focus to date has been of low-pressure and plasma enhanced chemical vapor deposition (LPCVD & PECVD) processes. Both are employed in SNL's SUMMiT V technology though as of this writing the PECVD process model includes only unbiased wafers. Examples of step coverage of SiO2 into a trench by each of he LPCVD and PECVD process are presented.

Nanotech 2004 Conference Technical Program Abstract

 
Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact