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A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model

S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu
National Nano Device Laboratories, TW

Keywords: MOSFET, substrate, small-signal modeling, parameter extraction

Abstract:
In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed to accurately determine the whole model parameters. The agreement between the measured and simulated S-parameters up to 40GHz proves the feasibility of this modified extraction method.

Nanotech 2004 Conference Technical Program Abstract

 
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