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Valence-band Energies of GaAs/AlGaAs and InGaAs/InP V-groove [1-10] Quantum Wires

B. Lassen, L.C. Lew Yan Voon, R. Melnik and M. Willatzen
Worcester Polytechnic Institute, US

Keywords: semiconductor, nanostructures, V-groove, quantum wires, electronic properties, theory

Abstract:
Comparison between the Burt-Foreman and Luttinger-Kohn valence-band Hamiltonians have been performed for realistic V-groove GaAs/AlGaAs and InGaAs/InP quantum wires. Significant differences in band structure is only found for InGaAs/InP quantum wires.

Nanotech 2004 Conference Technical Program Abstract

 
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