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Impact of Quantum Mechanical Tunnelling on Off-leakage Current in Double-gate MOSFET using a Quantum Drift-diffusion Model

M-A Jaud, S. Barraud and G. Le Carval
CEA-LETI, FR

Keywords: quantum tunnelling, double-gate, quantum-drift-diffusion-model

Abstract:
With the growing use of wireless electronics systems, off-state leakage current in MOSFETs appears as one of the major physical limitations. Measurements of quantum tunnel current between source-drain (S?D) have recently shown that it will become detrimental in bulk MOSFET architecture for channel length around 5nm and at low temperature (£100K). After a careful validation of quantum drift-diffusion model (QDDM), we present a systematic study of the impact of source-drain direct tunnelling on off-state leakage current in double-gate MOSFET architectures. A large range of temperature (100K

Nanotech 2004 Conference Technical Program Abstract

 
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