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Single-Dot Spectroscopy of Low Density GaAs Quantum Dots Grown by Modified Droplet Epitaxy

M. Yamagiwa, F. Minami and N. Koguchi
Tokyo Institute of Technology, JP

Keywords: modified droplet epitaxy, GaAs, quantum dot, micro-photoluminescence

Abstract:
Low density GaAs/AlGaAs quantum dots (QDs) have been fabricated using Modified Droplet Epitaxy (MDE) [1] for the spectroscopic study of single QDs using microphotoluminescence (µPL). In µPL measurements, the excitation/observation area is focused by a 50°? objective to a spot size of approximately 0.6 µm. Thus, a low density sample was necessary to limit the number of QDs in such a spot size to no more than one. This work made possible the first broad-spectrum single QD spectroscopy of GaAs/AlGaAs QDs fabricated by MDE. The excitation intensity dependence of the µPL spectrum of this sample shows multiple spectral lines which appear at higher excitation intensities. These lines appear from the recombination of electrons and holes from higher energy levels.

Nanotech 2004 Conference Technical Program Abstract

 
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