A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology

Y. Iino
Silvaco Japan, JP

Keywords: HiSIM, surface potential, parameter extraction, compact model

Abstract:
This paper reports HiSIM-1.2 Spice model parameter extraction for a practical 90 nm technology devices. The extraction sequence with the measurement data will be exhibitted. The number of optimized HiSIM parameters were only 19 out of 89. And the result verified the HiSIM-1.2 model scalability down to 100 nm with several improvement points.

Nanotech 2004 Conference Technical Program Abstract