Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2004 NSTI Nanotechnology Conference & Trade Show
Nanotech 2004
BioNano 2004
Program
Topics & Tracks
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
Keynotes
Awards
Tutorials
Business & Investment
2004 Sub Sections
Sponsors
Exhibitors
Venue 2004
Proceedings
Organization
Press Room
Purchase CD/Proceedings
NSTI Events
Subscribe
Site Map
 
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Nanotech Supporting Organizations
Media Sponsors
Nanotech Media Sponsors
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Spectral Analysis of Channel Noise in Nanoscale MOSFETS

G. Casinovi
Georgia Institute of Technology, US

Keywords: noise, simulation, device modeling

Abstract:
This paper describes an algorithm for numerical computation of the power spectral density (PSD) of channel noise in nanoscale MOSFETs. Noise generation phenomena inside the channel are modeled as random processes, represented by distributed sources that are added to the equations describing charge transport in the channel. The resulting set of differential equations is then solved using a frequency-domain simulation algorithm, yielding the total noise PSD at the device terminals. Comparisons between simulated and measured values of the noise PSD can then be used to test the validity of noise models for nanoscale MOSFETs. Simulation results obtained on a MOSFET under various DC bias conditions are presented.

Nanotech 2004 Conference Technical Program Abstract

 
Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact