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Planarize the Sidewall Ripples of Silicon Deep Reactive Ion Etching

K-Y Weng, M-Y Wang and P-H Tsai
Industrial Technology Research Institute, TW

Keywords: silicon deep RIE, sidewall roughness

Abstract:
In order to diminish the sidewall defects in silicon deep reactive ion etching process, depositing doped silicon dioxide and post-annealing processes are applied. Compared with conventional approaches, the filling-reflow surface shows nearly optical quality. the sidewall roughness of different schemes is compared by cross-section views of scanning electron microscope, shown in the figure 3 and 4 and the ripples are successfully diminished. Atomic force microscopy, AFM, measurement shows 77 and 22 nm in the etched structure and 37 and 8 nm for the PSG-deposited structures, respectively peak-to-valley difference and root mean square. The unique integrated processes expect to implement in the micro devices or replica master with optical surfaces.

Nanotech 2004 Conference Technical Program Abstract

 
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