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Nano-Scale Effects in GaN-based Light-Emitting Diodes

J. Piprek and S. Nakamura
University of California, US

Keywords: wurtzite semiconductors, GaN, light-emitting diodes, built-in polarization, InGaN quantum well, nano-photonics

Abstract:
We here investigate the effects of built-in polarization on the properties of non-symmetric InGaN quantum wells. The impact of these nano-scale effects on the performance of blue light emitting diodes is analyzed utilizing advanced numerical simulation.

Nanotech 2004 Conference Technical Program Abstract

 
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