Nano-Scale Effects in GaN-based Light-Emitting Diodes
J. Piprek and S. Nakamura
University of California, US
Keywords: wurtzite semiconductors, GaN, light-emitting diodes, built-in polarization, InGaN quantum well, nano-photonics
We here investigate the effects of built-in polarization on the properties of non-symmetric InGaN quantum wells. The impact of these nano-scale effects on the performance of blue light emitting diodes is analyzed utilizing advanced numerical simulation.
Nanotech 2004 Conference Technical Program Abstract