Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2003 NSTI Nanotechnology Conference & Trade Show
Nanotech 2003
BioNano 2003
Program
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
2003 Sub Sections
Proceedings
Organization
Press Room
Sponsors
Exhibitors
Venue
Organizations
NSTI Events
Subscribe
Site Map
 
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Supporting Organizations
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Strain Effect on the Final State Density-of-State for Hole Scattering in Silicon

Kazunori Matsuda, Hiroshi Nakatsuji ant Yoshinari Nakatsuji
Naruto University of Education, JP

Keywords: strain, density-of-state, silicon, hole

Abstract:
Recently, strained-Si on Si_{1-x}Ge_x subtrate attracts considerable attention so as to enhance the carrier mobility in MOSFETs. The hole transport mechanism, however, has no been completely understood yet. The most important problem this mechanism is thestraned-induced. In the present approach, we calculated the average attracts of FSDOS in strained-Si by using a non-local pseudopotential methds, The strained-Sr and Monte Carlo simulation. The strain-induced change in density-of-state (DOS) is estimated, which is comprised of two effects: the distortion of the valence band, and the splitting of heavy hole and right hole bands [1]. The mixing ratio of the DOSs for the heavy hole and right hole bands in the latter effect is determined by Fermi distribution function including the magnitude od the splitting. The FSDOS is comprised of two FSDOSs which are caused by different scattering machanism: the intra-band scattering and the inter-band scattering. These two FSDOSs are computed by the Monte Carlo simulation. Then the mixing rate of the intra-band and inter-band phonon scattering are estimated, though the former leads no effects on the charge of the final state density-of-state. As the results, we show the band splitting plays an important role for FSDOS and the magnitude of the hole mobility is shown. We also present some approximated formulae for FSDOS by deducing from the theory of Pickus and Bir [2]. Our results of the simulation are compared with the recent works [3,4,5]. [1] Carl. L. Julian and F. O. Lane, Jr "Change ot the Density-of-State Effective Mass of Holes in Germanium Induced by [111] and [100] One-Dimentional Strain and by [111] and [100] Uniaxial Stress," Phys. Rev. B7(2), 723 (1973). [2] G. L. Bir and C. E. Pickus, "Symmetry and Strain-Induced Effects in Semiconductors," John Wiley & Sons, New York/Tronto 1974. [3] A. P. French, P. A. Besse, M. Bachtold and R. S. Popovic "Simulation of the Piezo-Tunneling Effect," Tech. Proc. of the Second Int'l Conf. on MSM, 419(1999). [4] J. R. Watling, A. Asenov and J. R. Baker, "Efficient Hole Transport Model in Warpped Bands for Use in the Simulation of Si/SiGe MOSFETs," IWCE-6, 96(1998). [5] F. B. Bufler, "Full Band Monte Carlo Simulation of Electron and Holes in Strained Si and SiGe," (Herbert Utz Verlag, Wissenchaft, 1998).

NSTI Nanotech 2003 Conference Technical Program Abstract

 
Featured Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact