Vertical nano-wire transistor in flexible polymer foils
J. Chen and R. Koenenkamp
Hahn-Meitner Institut, DE
Keywords: semiconductor, transistor, flexible, nano-wire
We report here on recent progress in the deposition of functional electronic devices within the etched ion tracks of flexible polymer foils. Diodes and transistors have been fabricated. Typical device diameters are in the range 60 to 100 nm. The devices have the advantage of being robustly embedded in a comparably soft matrix. Therefore strain forces due to flexing, shearing and tearing are nearly exclusively taken up by the foil and have little influence on the electronic parameters of the embedded devices.
We will discuss the preparation of well-defined etch cylinders, semiconductor, metal and insulator deposition, and several novel devices. Emphasis will be on a vertical nano-wire field-effect transistor with a smallest diameter of 30-60 nm.
NSTI Nanotech 2003 Conference Technical Program Abstract