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Design and fabrication of an integrated CMOS-MEMS 3-axis accelerometer

H. Xie, Z. Pan, W. Frey and G. Fedder
University of Florida, US

Keywords: CMOS-MEMS, accelerometer, 3-axis

Abstract:
This paper reports a novel single structure, three-axis sensing accelerometer based on post-CMOS process. The resultant device incorporates both thin-film structures and bulk Si structures to achieve three-axis acceleration sensing without extra front-side lithography, or wafer bonding, which are required by other CMOS three-axis accelerometers. Behavioral simulation using NODAS and FEM simulation were used to validate the design. The overall structure size is about 1mm by 1mm. Noise floor of 0.1 mG/rtHz is expected in all three axes. Characterization is ongoing.

NSTI Nanotech 2003 Conference Technical Program Abstract

 
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