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Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation

Gary H. Loechelt, Jim Sellers, Jim Morgan, Misbahul Azam
ON Semiconductor, US

Keywords: transit time, bipolar transistor, BJT, device simulation

Abstract:
Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation

NSTI Nanotech 2003 Conference Technical Program Abstract

 
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