Three-dimensional, full-band, quantum modeling of electron and hole transport through Si / SiGe nano-structures

C. Rivas and R. Lake
University of California, US

Keywords: Si, nanowire, full-band, computational nanoelectronics

Abstract:
Full-band, three-dimensional (3D), atomistic, non-equilibrium Green fuction simulations are used to model Si nanowires. Full-band and single band calculations are compared. The effect of surface passivation is analyzed in the full-band simulations. Our approach to the difficult modeling issues is discussed.

NSTI Nanotech 2003 Conference Technical Program Abstract