Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2003 NSTI Nanotechnology Conference & Trade Show
Nanotech 2003
BioNano 2003
Program
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
2003 Sub Sections
Proceedings
Organization
Press Room
Sponsors
Exhibitors
Venue
Organizations
NSTI Events
Subscribe
Site Map
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Supporting Organizations
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Three-dimensional, full-band, quantum modeling of electron and hole transport through Si / SiGe nano-structures

C. Rivas and R. Lake
University of California, US

Keywords: Si, nanowire, full-band, computational nanoelectronics

Abstract:
Full-band, three-dimensional (3D), atomistic, non-equilibrium Green fuction simulations are used to model Si nanowires. Full-band and single band calculations are compared. The effect of surface passivation is analyzed in the full-band simulations. Our approach to the difficult modeling issues is discussed.

NSTI Nanotech 2003 Conference Technical Program Abstract

 
Featured Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact