Fullband particle-based simulation of optical excitation in Silicon pin diodes.

S. Wigger-ABoud, M. Saraniti, S. Goodnick and A. Leitenstorfer
Rush Medical Center and Illinois Institute of Technology, US

Keywords: Silicon, optical excitation, particle-based simulation

Abstract:
A fullband particle-based simulator is used to model photo-generated electron-hole pairs in Si. This work is motivated by experimental measurements of optically excited Si pin diodes. Results will be compared qualitatively to investigate charge transport behavior on ultra-short time scales.

NSTI Nanotech 2003 Conference Technical Program Abstract