Synchrotron radiation study of nano-scale semiconductors

Krishna G. NATH, Iwao SHIMOYAMA, Tetsuhiro SEKIGUCHI and Yuji BABA
Japan Atomic Energy Research Institute (JAERI), JP

Keywords: Semiconductor nanostructures, nanowires, Synchrotron radaiation, Photoemission, electronic structures

Abstract:
In the coming nanotechnology age, Semiconductor-assembled nanostructures will be the key components for fabrication of many nanodevices. Due to technological and research importance, study of Si, Ge-epitaxy on inert substrates, such as semi-metallic graphite and insulating sapphire has attracted much attention in recent years. For example, scanning tunneling microscopy measurement was performed to observe the Si nanowires on graphite [1]. However, electronic structures of Si nanowires and Si-clusters on HOPG are not known. Recently we have carried out the core level photoemission and photoabsorption experiment for different Si thin films deposited on Highly Oriented Pyrolitic Graphite (HOPG) and insulating Sapphire (Al2O3). The in-situ measurements were performed at BL27A, Photon Factory. Si was deposited on the substrates at room temperature by using electron deposition method. After Si deposition, sample was transferred to analysis chamber, and Si 1s photoemission spectra and photoabsorption spectra at Si 1s near edge were measured.

NSTI Nanotech 2003 Conference Technical Program Abstract