A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFET's Operation from Strong Accumulation to Depletion region

Jin He, Xuemei Xi, Mansun Chan, Chenming Hu
UNIVERSITY OF CALIFORINIA AT BERKELEY, US

Keywords: Compact modeling, MOSFETs, accumulation layer, surface potential, capacitance.

Abstract:
A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFET's Operation from Strong Accumulation to Depletion region Jin He*+, Xuemei Xi*, Mansun Chan*, and Chenming Hu* (*Electronics Research Laboratory, Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, CA, 94720, USA) (+Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China) e-mail jinhe@eecs.berkeley.edu fax:01-510-643-2636 Abstract A physics-based analytical continuous model of MOSFET surface p potential and capacitance from strong accumulation to depletion is presented and the result is compared with 2-D numerical device simulation. Starting from the Poisson equation, an exact solution of the surface potential from accumulation to depletion is derived. Then, a continuous capacitance expression has been obtained and which gives a good agreement with 2-D device simulation. In addition, the importance of this model is demonstrated in the analysis of harmonic distortion.

NSTI Nanotech 2003 Conference Technical Program Abstract